IEEE
You are not logged in, please sign in to edit > Log in / create account  

First-Hand:Start of epitaxial growth at Texas Instruments

From GHN

Jump to: navigation, search

 A beginning of Epitaxial Growth R and D at Texas Instruments

In the summer of 1960 I worked for Walter Runyan.  Walt came in one day, while I was working on Si solar cell calibration and some photovoltaic devices as I recall, asked me to look into epitaxial growth.Ok.  Three weeks later, Walt asked me what I was doing on silicon epy.  Where is it being done and how do you spell it?  Its on the back dock (of the new Material's Building).  I went out later and found it in a converted broom closet.  Walt asked me somewhat later if I had found the reactor.  "Yes", I said, "but it can't be important; it is in a broom closet".  "Jerry", he said, "you couldn't be more wrong".  Our epi group later grew to 4 more engineers.  I later had the second publication on the subject:


1962  Kinetics of Silicon Crystal Growth from SiCl4 Deposition, Journal of The Electrochemical Society, 109, No. 12, December, 1962 pp1171-1175.  And a chapter with Cameron Allen in an ASME conference book.